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YES IMAGE REVERSAL SYSTEMS |
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The image reversal
process reverses the action of positive resist so negative images can be
formed with the same resolution and processing ease that a positive
resist allows. What’s more, image reversal allows variations of the
slope of the photoresist sidewall for higher resolution and/or lift off
profiles.
YES-8TAE and YES-10TAE image reversal systems make it possible to achieve
precisely defined vertical sidewall profiles.
Image Reversal This process reverses the action of positive
resist so negative images can be formed with the same resolution and
processing ease of positive resist. |
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For
a system with dual function capabilities (vapor prime + image reversal),
check out our enhanced YES-310TA and YES-58TA models, (see below). |
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BENEFITS |
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YES
image
reversal system |
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Allows
variations of the slope of the photoresist sidewall for higher
resolution and improved lift off. |
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Replaces use
of harsh chemicals or plasma "metal etch” processes. |
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Using image
reversal on two or more layer resist levels can eliminate
residual photoresist along the sidewalls, preventing "shorts"
from level to level without reducing line width. |
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Image reversal
done with dark or light fields eliminates standing waves; this
allows steep and straight profiles, repeatable results, and
excellent chemical deposition uniformity. |
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Image reversal
achieves excellent results for rework problems; underlying
substrate is protected (for a double metal process), so unwanted
metal can be stripped away without "pitting" or eroding the
underlying level. |
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INFORMATION |
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to
Product Specification Chart |
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to YES
Info Page |
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SOFTWARE OPTIONS |
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to
Process
Management Software |
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TECHNICAL NOTES |
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Image
Reversal of Positive Photoresists
Technical Note 
Optimize
Image Reversal of Positive Photoresists
Technical Note 
Image
Reversal Techniques
with
Standard
Positive Photoresist
Technical Note 
Surface tension
modification for Biotech Industry
Technical Note  |
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PROCESS |
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Image Reversal reverses the
action of positive resist so that negative images can be formed. This
allows negative imaging with the resolution and ease of processing that
positive resist allows. It also allows variations of the slope of the
photo resist side wall for higher resolution and or lift off profiles.
Silylation is the chemical act of implanting a silicon rich molecule in
the top layers of exposed positive photo resist. This allows deep U.V.
exposure that has a small depth of focus to expose only the top layer, say
the top 3,000 Angstroms of photo resist. After exposure the silylation
implants silicon in the top 3,000 Angstroms. A low pressure, 5 to 10
milliliter Oxygen plasma creates a silicon dioxide layer about 50 to 200
Angstroms thick on the top of the exposed resist layer. The oxygen plasma
eats the unexposed resist and the process engineer has the ability to use
higher resolution deep U.V. and also have plasma developable positive
resist. |
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