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YES PLASMA PHOTORESIST STRIP/DESCUM SYSTEMS
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In wafer fabrication,
photoresist is used to transfer a circuit pattern onto the wafer. Once a
pattern is transferred, the remaining photoresist must be removed from
the wafer before it can move to the next processing step. The process of
removing residues (scum) is known as descumming.
Plasma systems are effective for stripping thick layers of photoresist,
descumming, etching, and removing organics. Plasma is an ionized gas
capable of conducting electricity and absorbing energy from an
electrical supply. (Lightning and the Aurora Borealis are naturally
occurring examples of plasma). Manmade plasma is generally created in a
low-pressure environment.
When a gas absorbs electrical energy, its temperature increases causing
the ions to vibrate faster. In an inert gas, such as Argon, the excited
ions can bombard a surface ("sandblast") and remove a small amount of
material. In the case of an active gas such as Oxygen, ion bombardment
as well as chemical reactions occur. As a result, organic compounds and
residues volatilize and are removed. |
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YES-CV200 systems
remove thick layers of photoresist in the shortest amount of production
time. Powerful plasma stripping "sandblasts" tough resist in an
automated, user-friendly system. Or, for gentler cleaning operations,
the "descum" function can be selected at the switch of a button.
Touch screen control and real time pictorial readout of system status
and maintenance requirements are standard. Process data is output to a
recording computer and compiled into a Microsoft® Excel report. |
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BENEFITS |
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YES
CV200RF Plasma Photoresist Strip/Descum System |
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Automated
process |
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Strip rate up
to 15,000 Angstroms per minute |
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Real time
temperature control |
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Less than 10
mV electron shift, even with sensitive gate oxides |
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Touch screen
interfaced to PLC controller for control of process parameters and
maintenance information |
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External
control and monitoring of process parameters |
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Optional
chamber cooling jacket provides increased temperature control
for greatest repeatability of strip rate wafer to wafer
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FEATURES |
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Full PLC Control |
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Touchscreen Operator Interface |
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End point
detection |
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Multiple mass
flow controllers |
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Long diode
lifetime |
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Variable
process temperature and pressure |
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Variable
microwave power (up to 2 kW) |
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Real-time
power auto-tune |
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Sophisticated,
yet user friendly software |
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Auto detects
wafer cassette size |
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Up to 32
engineer defined operating programs can be stored in protected
memory |
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OPTIONS |
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to
Process
Management Software |
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TECHNICAL NOTES |
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Refinements
of Plasma Processing
Technical Note 
TF1
Wafer Testing
Technical Note  |
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POLYIMIDE
DESCUM ETCH AND STRIP
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We
have 2 standard plasma units a CV100PLE-APS for up to 6 inch wafers and
a CV108 for 6 to 8 inch wafers.
The patented gas swirl process gives better uniformity and allows
Polyimide descumm to be more controllable. After significant work with
microwave mode control we achieved better than + or - 10% control.
M.F.C. control of the gas mixtures can allow high CF4 concentration during
etch with low CF4 concentration at the end of the etch cycle so the wafer
silicon would not get severe etching at the end of the Polyimide etch
cycle. Software control of the M.F.C setting over the expected etch time
of the Polyimide allows this feature. We can also control software
allowing variations of the CF4 and Oxygen concentration during etch so the
slope of the etched line can be controlled. Software control of the
temperature gives the etch rate and slope of the etched line more control.
The software allows multiple process parameters to be entered. A full
cassette of wafers can be run, with each wafer receiving a separate
process so development of a variation of the process can be programmed in
and tested and run quickly.
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YES
CV108 DOWNSTREAM PLASMA STRIPPER
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YES
CV108 is a
single-wafer, downstream plasma stripper/descummer. For removal of
photoresist or polyimide coatings from 150 or 200mm wafer the YES
CV108 uses microwave energy to ionize Oxygen gas. The resulting
Oxygen plasma reacts with the organic coatings and turns them to CO2 and
H2O vapors which are drawn out by the vacuum pump and removed through the
house exhaust. No hazardous fluids are involved. No hazardous wastes are
generated. The high frequency of the microwave assures no ion acceleration
to speeds that could cause physical sputter damage to the wafer surfaces.
The downstream design of the chamber assures that no electron damage can
occur to delicate gates on the wafers.
Technology is ever evolving and the equipment required to produce it must
evolve as well. A demand from IC manufactures for uniformity, faster
etch-rate, and versatility was heard. We responded with the CV108. With an
improved process chamber design, outstanding components, and flexible
software to maximize the process, the demand will be satisfied. Just take
a look at the features.
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FEATURES
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CV-108
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Photoresist, Polyimide and B.C.B Removal |
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Runs 6-8 in. wafers automatically |
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Two Mass Flow Controllers |
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Endpoint Detection: New patent-pending method |
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Variable Microwave Power: Up to 2kW of energy, per
process chamber |
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Variable Process Pressure: High pressure for fast
etch-rate or low pressure for enhanced uniformity |
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Variable Process Temperature: A thermocouple in contact
with the wafer precisely controls the heating process |
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Automated Microwave Tuning: Optimizes impedance
matching to deliver maximum power for plasma generation |
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Microwave Isolators: Increases lifetime of diodes by
preventing reflected energy from reaching the magnetron |
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Sophisticated Software: Five permanent process recipes
with a user-defined, "sixth" recipe |
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Selectable slot processing |
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USER
HELP |
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An online feature that gives abort recovery options,
trouble-shooting tips, and insures proper data input to minimize down-time
and make operation simple. The operating system has been designed to allow
minimum operator interface for your established process. But, you the
Process Engineer have extensive options in fine tuning a process ideal for
your product. The microwave power. process gas flows and wafer
temperatures are all programmable. You have final control over the setting. |
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DIMENSIONS
AND FACILITY REQUIREMENTS |
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SAFETY
FEATURES |
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Height 66 inches Width 55 inches Depth 58 inches
Main Power: 30 amps at 125V
Microwave Power: 30 amps at 208V
System Cooling: Chilled water, 3.5 gallons per minute at 15-20°C.
House Exhaust: Four-inch OD house exhaust.
Process Gas 1: Oxygen (O2)
electronic grade
Process Gas 2: Customer specified
Vent Gas: Nitrogen (N2)
High Pressure N2/CDA |
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Cooling
Flow: System is water-cooled and signals a leak or no flow condition
Microwave Status: - Overtemp alarm turns magnetron off if safe
temperature is exceeded
Arc alarm
Forward and reflected power gauges.
Software: - Allows operation only when proper conditions are met.
Warns operator of potential hazards. - Protects product by safe handling
at all times.
Four Pressure Setpoints:
Setpoint 1: Atmosphere.
Setpoint 2: Microwave Activation.
Setpoint 3: Upper process pressure limit.
Setpoint 4: Lower process pressure limit.
Panel interlocks
Chamber Door Position Indicators |
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TECHNICAL
NOTES |
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Refinements
of Plasma Processing
TF1
Wafer Testing
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YES
CV100-PLE-APS DOWNSTREAM PLASMA STRIPPER
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The YES-CV100-PLE-APS
Downstream Plasma Stripper offers the latest technology
in downstream wafer stripping in a compact, competitively priced, fully
automated system. Designed as a full service system, the CV100PLE-APS can
be quickly interchanged between stripping and descum modes by simply
flipping a control switch on the front panel. Specifically designed for
use with 2 to 6 inch wafers, the system includes automatic, robotic,
cassette to cassette loading and real time temperature readout. The system
provides an aggressive strip rate of up to 15,000 /min, while maintaining
a benign environment for even the most sensitive devices (less than 10mV
electron shift in 200 Gate Oxide).
The YES-CV100-PLE-APS is
controlled by a touchscreen interfaced PLC controller. The system can be
linked via RS232 to a host computer for data acqusition or other purposes.
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FEATURES
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CV-100PLE-PTS
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Less than 10mV electron shift in 200 Å Gate Oxide |
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Low temperature stripping for Galium Arsenide wafers |
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Strip rate dependent upon wafer temperature. Up to
15,000 Å/min strip rate |
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Rapid temperature ramp with real-time temperature
readout |
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Touch screen programming with keylocked select
programming |
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Multi-program high noise immunity Programmable Logic
Controller |
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RS232
communication standard for host computer monitor and control |
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