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The fastest and most efficient
production furnaces available for high-temperature semiconductor and
thick-film processing. High
production yields and through put are achievable due to the design's quick
start-up and change over time, precise and repeatable temperature profiles
up to 1000°C, and controlled-atmosphere capability of 1-3ppm above
incoming gas purity.
The RTC
S-900 and S-1200 Series Infrared Furnaces utilize high intensity heat to
achieve exacting temperature profiles, with rapid heat rise and no
overshoot. The rapid heat
rise of these furnaces is of particular advantage in the final lid sealing
or die attach process since the semi-conductor is not exposed to prolonged
high temperature. In lead
frame attachment, there is no contact with the part to cause distortion in
the frame. All leads remain planar which greatly facilitates subsequent
automatic wire bonding steps. The systems require only minutes to come up
to temperature and stabilize. |
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RTC Model S-1215
(click on picture to enlarge)
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Oxygen
Analyzer |
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Moisture Analyzer |
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Hydrogen Operation, Hydrogen/Nitrogen Mixing |
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Hydrogen Detector |
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On-Screen Profiling |
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Ultrasonic Cleaner with Optional Dryer |
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Belt Brush Cleaner. |
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Air Purification System. |
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Air Filter Regulator. |
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Emergency Power Supply. |
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Uninterruptible Power Supply. |
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Element Monitor. |
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Conveyor Extensions. |
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Redundant Over Temperature Scanner/Shutdown. |
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Electrical Line Filter. |
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Low Range Belt Speed (0.5 to
10 in./min.). |
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RTC Software Program, PC/HOST Communications and
Protocol. |
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Three Tier Process Ready/Alarm Light Tower |
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